The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes

Materials Physics and Chemistry

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Title The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes
Creator Askerov, Shahlar Gachayogli
Gasanov, M. G.
KAbdullayeva, L.
Subject Schottky diode, Metal-semiconductor contact, Interface, Barrier height, Breakdown voltage
Description In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semi-conductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a poly-crystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.
Publisher PiscoMed Publishing Pte Ltd
Date 2018-10-15
Type info:eu-repo/semantics/article

Format application/pdf
Source Materials Physics and Chemistry; Vol 1 , No 1; 1-6
Language eng
Rights Copyright (c) 2019 Sh.G.Askerov et al.

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