The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes

Materials Physics and Chemistry

View Publication Info
 
 
Field Value
 
Title The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes
 
Creator Askerov, Shahlar Gachayogli
Gasanov, M. G.
KAbdullayeva, L.
 
Subject Schottky diode, Metal-semiconductor contact, Interface, Barrier height, Breakdown voltage
 
Description In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semi-conductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a poly-crystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.
 
Publisher PiscoMed Publishing Pte Ltd
 
Contributor
 
Date 2018-10-15
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion

 
Format application/pdf
 
Identifier http://ojs.piscomed.com/index.php/MPC/article/view/565
10.18282/mpc.v1i1.565
 
Source Materials Physics and Chemistry; Vol 1 , No 1; 1-6
2661-412X
 
Language eng
 
Relation http://ojs.piscomed.com/index.php/MPC/article/view/565/518
 
Rights Copyright (c) 2019 Sh.G.Askerov et al.
http://creativecommons.org/licenses/by-nc/4.0
 

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