Effect of Oxide Thickness on GaN-based Double Gate MOSFETs

AIUB Journal of Science and Engineering

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Field Value
 
Title Effect of Oxide Thickness on GaN-based Double Gate MOSFETs
 
Creator Ahmed, Safayet
Hasan, Md. Tanvir
 
Subject Drain-induced barrier lowering (DIBL)
Effective Oxide Thickness (EOT)
GaN
OFF-state current (IOFF)
Subthreshold slope (SS)
 
Description The effect of oxide thickness (EOT) on GaN-based double gate (DG) MOSFETs have been explored for low power switching device. The gate length (LG) of 8 nm with 4 nm underlap is considered. The device is turned off and on for gate voltage (VGS) of 0 V and 1 V, respectively. The effective oxide thickness (EOT) is varied from 1 nm to 0.5 nm and the device performance is evaluated. For EOT = 0.5 nm, the OFF-state current (IOFF), subthreshold slope (SS) and drain induced barrier lowering (DIBL) are obtained 2.97×10-8 A/μm, 69.67 mV/dec and 21.753 mV/V, respectively. These results indicate that, it is possible to minimize short channel effects (SCEs) by using smaller value of EOT.
 
Publisher American International University-Bangladesh
 
Date 2020-01-06
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
 
Format application/pdf
 
Identifier http://ajse.aiub.edu/index.php/ajse/article/view/72
 
Source AIUB Journal of Science and Engineering (AJSE); Vol 16 No 2 (2017): AJSE Volume 16 Issue 2 (2017); 83 – 88
2520-4890
1608-3679
 
Language eng
 
Relation http://ajse.aiub.edu/index.php/ajse/article/view/72/53
 
Rights Copyright (c) 2020 AIUB Journal of Science and Engineering (AJSE)
https://creativecommons.org/licenses/by-nc-nd/4.0
 

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