A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers

ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY

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Field Value
 
Title A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers
 
Creator Chaqmaqchee, Faten A.
 
Subject AlGaAs/GaAs
Current-voltage
Distributed Bragg reflectors
Mobility
 
Description This paper presents an electrical analysis of various diameters of two p-types of GaAs/Al0.9Ga0.1As and two p-types of GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As distributed Bragg reflectors (DBRs) mirrors structure grown on undoped and on p-doped GaAs, which affects the characteristics of 1300 nm vertical cavity surface emitting lasers (VCSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs). Electrical characterizations and Hall measurements of current−voltage (IV) for GaAs/Al0.9Ga0.1As linear DBRs and GaAs/Al0.3Ga0.7As/Al0.9Ga0.1 As graded DBRs were also performed at temperatures between 13 and 300 K. Consequently, p-type DBRs are designed with graded composition interfaces technique. The smaller mesa diameters are used to reduce vertical and longitudinal resistances and to limit the heating effect and improve the characteristics of VCSEL/VCSOA devices.
 
Publisher Koya University
 
Date 2021-06-03
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Peer-reviewed article
text
 
Format application/pdf
 
Identifier http://aro.koyauniversity.org/index.php/aro/article/view/741
10.14500/aro.10741
 
Source ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY; Vol. 9 No. 1 (2021): Issue Sixteen; 89-94
2307-549X
2410-9355
 
Language eng
 
Relation http://aro.koyauniversity.org/index.php/aro/article/view/741/210
 
Rights Copyright (c) 2021 Faten A. Chaqmaqchee
https://creativecommons.org/licenses/by-nc-sa/4.0
 

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