Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Nano Reviews & Experiments

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Title Electric-field controlled ferromagnetism in MnGe magnetic quantum dots
 
Creator Xiu, Faxian
Wang, Yong
Zou, Jin
Wang, Kang L.
 
Subject Diluted Magnetic Semiconductors, Spintronics, Nonvolatile, Mn0.05Ge0.95, Quantum Dots, Electric Field Controlled Ferromagnetism, Magnetic Polarons
 
Description Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K) and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs), materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS) technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs) and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metaloxide- semiconductor (MOS) capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots) was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism. Keywords: diluted magnetic semiconductors; spintronics; nonvolatile; Mn0.05Ge0.95; quantum dots; electric-field controlled ferromagnetism; magnetic polarons (Published: 7 March 2011) Citation: Nano Reviews 2011, 2: 5896 - DOI: 10.3402/nano.v2i0.5896
 
Publisher Co-Action Publishing
 
Contributor We gratefully acknowledge the financial support from the Western Institute of Nanoelectronics (WIN), the Intel Spin-Gain FET project, and the Australian Research Council.
 
Date 2011-03-07
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion

 
Format application/pdf
text/html
application/epub+zip
text/xml
 
Identifier http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5896
10.3402/nr.v2i0.5896
 
Source Nano Reviews & Experiments; Vol 2 (2011) incl Supplements
2002-2727
 
Language eng
 
Relation http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5896/7872
http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5896/7874
http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5896/7881
http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5896/7873
 

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