Application of nanomaterials in two-terminal resistive-switching memory devices

Nano Reviews & Experiments

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Field Value
 
Title Application of nanomaterials in two-terminal resistive-switching memory devices
 
Creator Ouyang, Jianyong; National University of Singapore
 
Subject nanoparticle; nanotube; graphene; memory; resistive switching; charge storage; nonvolatile
 
Description Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Keywords: nanoparticle; nanotube; graphene; memory; resistiveswitching; charge storage; non-volatile (Published: 26 May 2010) Citation: Nano Reviews 2010, 1: 5118 - DOI: 10.3402/nano.v1i0.5118
 
Publisher Co-Action Publishing
 
Contributor
 
Date 2010-05-26
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion

 
Format application/pdf
text/html
text/xml
 
Identifier http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5118
10.3402/nr.v1i0.5118
 
Source Nano Reviews & Experiments; Vol 1 (2010) incl Supplements
2002-2727
 
Language eng
 
Relation http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5118/5641
http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5118/5643
http://www.nanoreviewsexperiments.net/index.php/nano/article/view/5118/5642
 

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