Simulation of Energy Bands for Metal and Semiconductor Junction

Journal La Multiapp

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Field Value
Title Simulation of Energy Bands for Metal and Semiconductor Junction
Creator Kyaw, Wut Hmone
Aye, May Nwe Myint
Subject MOSFET
band structure
gallium nitride
Description This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language.
Publisher Newinera Publisher
Date 2020-06-21
Type info:eu-repo/semantics/article
Peer-reviewed Article
Format application/pdf
Source Journal La Multiapp; Vol. 1 No. 2 (2020): Journal La Multiapp; 7-13
Language eng
Rights Copyright (c) 2020 Journal La Multiapp

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