Simulation of Energy Bands for Metal and Semiconductor Junction

Journal La Multiapp

View Publication Info
 
 
Field Value
 
Title Simulation of Energy Bands for Metal and Semiconductor Junction
 
Creator Kyaw, Wut Hmone
Aye, May Nwe Myint
 
Subject MOSFET
band structure
gallium nitride
metal-semiconductor
 
Description This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language.
 
Publisher Newinera Publisher
 
Date 2020-06-21
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Peer-reviewed Article
 
Format application/pdf
 
Identifier http://www.newinera.com/index.php/JournalLaMultiapp/article/view/107
10.37899/journallamultiapp.v1i2.107
 
Source Journal La Multiapp; Vol. 1 No. 2 (2020): Journal La Multiapp; 7-13
2721-1290
2716-3865
 
Language eng
 
Relation http://www.newinera.com/index.php/JournalLaMultiapp/article/view/107/57
 
Rights Copyright (c) 2020 Journal La Multiapp
https://creativecommons.org/licenses/by-sa/4.0/
 

Contact Us

The PKP Index is an initiative of the Public Knowledge Project.

For PKP Publishing Services please use the PKP|PS contact form.

For support with PKP software we encourage users to consult our wiki for documentation and search our support forums.

For any other correspondence feel free to contact us using the PKP contact form.

Find Us

Twitter

Copyright © 2015-2018 Simon Fraser University Library