Compact model with physical parameter prediction capability for RF amplifiers

Revista Facultad de Ingeniería

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Title Compact model with physical parameter prediction capability for RF amplifiers
Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF
 
Creator Rafael-Valdivia, Guillermo
 
Subject electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
 
Description In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements, data processing has been performed, deriving a new equation with the ability to reproduce both types of behavior with high precision and at different points of operation. Consequently, the work provides a new model based on a non-linear four-terminal circuit. The relevance of this model is the ability to predict physical effects such as frequency dispersion and electronic mobility of the semiconductor device. This is important because the frequency dispersion is one of the most important problems of modern communication systems that generates memory effects limiting the ability to transmit signals of high bandwidth. The fact of being able to predict the electronic mobility and the frequency dispersion help the circuit designer to improve their quality and design time. It also allows the RF component manufacturing industry to save production costs as this technique allows to predict the behavior of the circuits before implementing them. The presented methodology has been validated through the implementation of a power amplifier in LDMOS technology using the proposed technique. The proposed model is open since the proposed new technique can be implemented in any of the conventional models currently used in the industrial and academic field.
En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el comportamiento estático y dinámico de dichos dispositivos. En base a las medidas se ha realizado un procesamiento de datos derivando una nueva ecuación con la capacidad de reproducir ambos tipos de comportamiento con elevada precisión y en diferentes puntos de operación. Consecuentemente el trabajo aporta un nuevo modelo basado en un circuito no lineal de cuatro terminales. La relevancia de este modelo es la capacidad de predecir los efectos físicos como la dispersión frecuencial y la movilidad electrónica del dispositivo semiconductor. Esto es importante pues la dispersión frecuencial es uno de los problemas más importantes de los sistemas de comunicación modernos que genera efectos memoria limitando la capacidad de transmitir señales de gran ancho de banda. El hecho de poder predecir la movilidad electrónica y la dispersión frecuencial ayudan al diseñador de circuitos a mejorar su calidad y tiempo de diseño. Además, permite a la industria de fabricación de componentes de RF ahorrar costos de producción pues esta técnica permite predecir el comportamiento de los circuitos antes de implementarlos. La metodología para la obtención del modelo compacto ha sido validada a través de la implementación de un amplificador de potencia en tecnología LDMOS usando la técnica propuesta. El modelo propuesto es abierto puesto que la nueva técnica propuesta se puede implementar en cualquiera de los modelos convencionales usados actualmente en el ámbito industrial y académico.
 
Publisher Universidad Pedagógica y Tecnológica de Colombia
 
Date 2019-04-02
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
research
investigación
 
Format application/pdf
application/xml
 
Identifier https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132
10.19053/01211129.v28.n51.2019.9132
 
Source Revista Facultad de Ingeniería; Vol 28 No 51 (2019); 73-87
Revista Facultad de Ingeniería; Vol. 28 Núm. 51 (2019); 73-87
2357-5328
0121-1129
 
Language spa
 
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/*ref*/J. A. Pla, and D. Bridges, “A robust high voltage Si LDMOS model extraction process to achieve first pass linear RFIC amplifier design success,” In: IEEE MTT-S International Microwave Symposium Digest, 2002. DOI: https://doi.org/10.1109/mwsym.2002.1011607.
/*ref*/G. Rafael-Valdivia, T. Férnández-Ibáñez, J. Rodríguez-Tellez, A. Tazón Puente, and A. Mediavilla-Sánchez, “Measurement of Mobility in HEMT Devices Using High-Order Derivatives,” IEEE Transactions on Electron Devices, vol. 51 (1), pp. 1-7, Jan. 2004. DOI: https://doi.org/10.1109/ted.2003.820938.
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7628
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7902
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7915
 
Coverage N.A.
N.A.
 
Rights http://creativecommons.org/licenses/by/4.0
 

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