Resistive Random Access Memory (ReRAM)

International Journal of Research and Engineering

View Publication Info
 
 
Field Value
 
Title Resistive Random Access Memory (ReRAM)
 
Creator Dayalan, Muthu
 
Description Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM. The performance parameters of these non-volatile memories such as their operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage will be analyzed. Integration and reliability of Re-RAM in the practical level is compared with other types of memories. Challenges faced by users of ReRAM are addressed in regards to technological fallbacks among other challenges. Finally, the future research on the ReRAM will be analyzed.
 
Publisher IJRE Publisher
 
Date 2019-06-25
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Peer-reviewed Article
 
Format application/pdf
 
Identifier https://digital.ijre.org/index.php/int_j_res_eng/article/view/381
10.21276/ijre.2019.6.3.2
 
Source International Journal of Research and Engineering; Vol 6 No 3 (2019): June 2019 Edition; 612-615
2348-7860
2348-7852
 
Language eng
 
Relation https://digital.ijre.org/index.php/int_j_res_eng/article/view/381/341
 
Rights Copyright (c) 2019 Muthu Dayalan
http://creativecommons.org/licenses/by/4.0
 

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